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- W2028522624 abstract "Phosphorous from P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> is more effective than nitrogen for passivating the 4H-SiC/SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s. However, P <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> converts the SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> /V·s for MOSFETs fabricated with a thin PSG gate layer ( ~ 10 nm) capped with a deposited oxide." @default.
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- W2028522624 date "2013-02-01" @default.
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- W2028522624 title "High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer" @default.
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- W2028522624 doi "https://doi.org/10.1109/led.2012.2232900" @default.
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