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• W2028532616 abstract "In order to make the silicon interface control layer (Si ICL)-based surface passivation technique applicable to air-exposed AlGaAs surfaces, various surface treatments were systematically studied. The treatments investigated include UHV thermal cleaning, ( NH 4 ) 2 S x treatment, HCl treatment and H 2 plasma treatment. Chemical status and quality of the treated surfaces were evaluated by in-situ and ex-situ X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements. A strong correlation was found between the band-edge PL intensity and the amount of surface oxide components, in particular Al-oxides. Marked reduction of the amount of oxide components and enhancement of PL intensity were realizable by a combination of HCl surface treatment and Si ICL formation." @default.
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• W2028532616 date "1997-03-01" @default.
• W2028532616 modified "2023-09-26" @default.
• W2028532616 title "Successful Surface Passivation of Air-Exposed AlGaAs by a Silicon Interface Control Layer-Based Technique" @default.
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• W2028532616 doi "https://doi.org/10.1143/jjap.36.1756" @default.
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