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• W2028561922 abstract "Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation G. Koblmüller, R. M. Chu, A. Raman, U. K. Mishra, J. S. Speck; High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels. Journal of Applied Physics 15 February 2010; 107 (4): 043527. https://doi.org/10.1063/1.3285309 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search" @default.
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• W2028561922 date "2010-02-15" @default.
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• W2028561922 title "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels" @default.
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