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• W2028564688 startingPage "257" @default.
• W2028564688 abstract "Carbothermal process parameters such as powder mixing ratio, temperature, holding time and gas flow rate, which affect on the reasonable growth rate of SiC nanowires were investigated using a mixture of low-purity SiO2 containing iron component and carbon in this study. SiC nanowires are being grown at 1400 °C for 2 h in an argon flow rate of 2 L/min by a vapor–liquid–solid (VLS) process, which produces a very high-purity product with about 60 nm and several hundreds of micrometers in diameter and length, respectively. This is attributed to the migration of the iron out of the low-purity SiO2 material as finely divided iron-rich droplets acting in the role of catalyst for the architecture of a SiC one-dimensional structure. The growth rate of SiC nanowires increased with increasing holding time and flow gas rate, inducing the supersaturation degree to become lower." @default.
• W2028564688 created "2016-06-24" @default.
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• W2028564688 date "2008-05-01" @default.
• W2028564688 modified "2023-09-30" @default.
• W2028564688 title "In situ growth of SiC nanowires by carbothermal reduction using a mixture of low-purity SiO2 and carbon" @default.
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• W2028564688 doi "https://doi.org/10.1016/j.jallcom.2007.02.010" @default.
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