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- W2028617825 abstract "By using a single quantum well structure, the dependence of the Ga desorption rate upon the step density in the growth of GaAs by molecular beam epitaxy is studied. It is shown that the desorption rate has no dependence in the entire range of the growth temperature within the sensitivity of the experiments. By comparing the present theory with the experimental results, the upper limit of supersaturation possibly existing at the growth step is estimated and it is concluded that near equilibrium is established at the step edge at relatively high growth temperature where the evaporation of Ga occurs." @default.
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- W2028617825 date "1991-09-01" @default.
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- W2028617825 title "Dependence of Ga Desorption Rate upon the Step Density in Molecular Beam Epitaxy of GaAs" @default.
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- W2028617825 doi "https://doi.org/10.1143/jjap.30.l1612" @default.
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