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- W2028656706 abstract "Direct observation of back tunneling in MNOS requires the direct and continuous display of the charge previously injected into the insulator. A new experimental technique having such a feature is presented. It is characterized by its simultaneous and direct measurements of both the change in charge in the insulator and the corresponding change in the device's flat-band voltage. Charge loss via back tunneling in devices of different tunnel-oxide thicknesses is presented." @default.
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- W2028656706 title "Direct display of electron back tunneling in MNOS memory capacitors" @default.
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- W2028656706 doi "https://doi.org/10.1063/1.1654840" @default.
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