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• W2028665622 abstract "Abstract Using a molecular dynamics DFT-LDA code, we have analyzed the Schottky-barrier formation of a Se-passivated GaAs(1 0 0)-2×1 reconstruction. In our approach we consider, first, the energetically most favorable interfaces formed by the deposition of either one or two Ga atoms per surface unit cell; then, we analyze the electron density of states and calculate the interface Fermi level and the Schottky-barrier height. We show that the height depends essentially on the very same interface geometry. In particular, the effect of exchanging Ga and Se atoms at the interface (an intermixing process) yields a normal Schottky-barrier height, while the normal passivated surface yields an ohmic contact." @default.
• W2028665622 created "2016-06-24" @default.
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• W2028665622 date "2002-05-01" @default.
• W2028665622 modified "2023-10-18" @default.
• W2028665622 title "Metallization and Schottky-barrier formation for Se-passivated GaAs(1 0 0) interfaces" @default.
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• W2028665622 doi "https://doi.org/10.1016/s0169-4332(01)00921-7" @default.
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