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- W2028766173 abstract "The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon ( NPSi : Al ) have been conducted. Nanoporous silicon ( NPSi ) layers have been prepared by anodically etching the unpolished p-type Si [100] wafer with surface resistivity of 4–8 Ω cm -1 in hydrofluoric solution at 1:1 ratio of ethanol. Aluminum ( Al ) was doped on NPSi using cathodic electrodeposition composed of aluminum chloride ( AlCl 3 ) and ethanol electrolyte. A diode structure has been fabricated comprising a semi-transparent Au / NPSi : Al / p - Si / Al ohmic contact electrode showing rectification on a forward bias I–V curve. EL from NPSi and NPSi : Al / p - Si has also been observed using the diode structure. The NPSi : Al / p - Si device shows increasing EL quantum efficiency at about 30%, and blue-shift EL spectra are observed. Possible reasons for the enhancement will be discussed." @default.
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- W2028766173 date "2006-10-01" @default.
- W2028766173 modified "2023-09-26" @default.
- W2028766173 title "A NOVEL NANOPOROUS SILICON PREPARED USING ELECTROCHEMICAL DEPOSITION TECHNIQUE FOR LIGHT EMITTING DIODE APPLICATIONS" @default.
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- W2028766173 doi "https://doi.org/10.1142/s0218625x06008517" @default.
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