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- W2028773910 abstract "Abstract Lateral narrow heterovalent junctions consisting of GaAs and Ge were fabricated by a combination of electron-beam (EB) lithography and selective growth technique using molecular beam epitaxy (MBE). After patterning p+-GaAs (p=7×1018 cm−3) epilayer into the planar constriction, a 100 nm thick SiO2 film was deposited. The SiO2 mask and thin groove for Ge growth were formed in the p+-GaAs layer by EB lithography and wet-etching. The size of Ge island was approximately 4×0.3×0.1 μm3. The current–voltage characteristics through or across these GaAs–Ge–GaAs junctions were investigated at 1.5 K and showed zero bias anomaly, which is likely to be a kind of Coulomb blockade effect related to the Ge island. These results suggest the possibility to realize a new kind of heterovalent nanostructure with a unique confinement mechanism for holes." @default.
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- W2028773910 date "1998-07-01" @default.
- W2028773910 modified "2023-10-03" @default.
- W2028773910 title "Fabrication of GaAs–Ge–GaAs lateral narrow junctions and low-temperature hole transport" @default.
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- W2028773910 doi "https://doi.org/10.1016/s0038-1101(98)00066-5" @default.
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