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• W2028855914 abstract "We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4×1017cm−3, and a resistivity approaching 1 Ω cm at room temperature. Even heavy Si-doping (1×1020cm−3) does not degrade the structural properties of the AlN films. The morphology of these films is characterized by Si-induced step-bunching, but remains smooth with a rms roughness of about 1 nm." @default.
• W2028855914 created "2016-06-24" @default.
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• W2028855914 date "2005-01-05" @default.
• W2028855914 modified "2023-09-27" @default.
• W2028855914 title "Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy" @default.
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• W2028855914 doi "https://doi.org/10.1063/1.1850183" @default.
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