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- W2028941895 abstract "This study investigated the thermal reactions on the Cl-terminated $mathrm{S}mathrm{i}/mathrm{G}mathrm{e}(100)ensuremath{-}2ifmmodetimeselsetexttimesfi{}1$ surface using synchrotron radiation photoemission spectroscopy. Populations of surface Cl--Ge and Cl--Si bonds during annealing are monitored by measuring the intensities of their corresponding Ge $3d,$ Si $2p,$ and Cl $2p$ core-level components. Experimental results clearly demonstrate that no Si atoms are present on the surface after the deposition of 0.8 monolayer Si on the Ge(100) surface at 730 K and that Cl termination pulls out the indiffused Si of about two atomic layers deep to form Cl--Si bonds upon annealing at 550--690 K. We attribute such chlorine induced Si segregation to a thermodynamic driving force that favors the Cl--Si surface species. Above 680 K, chlorine is desorbed in the form of ${mathrm{SiCl}}_{2},$ although the top surface layer of the starting Si/Ge(100) sample consists of Ge--Ge dimers only." @default.
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- W2028941895 date "2001-11-02" @default.
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- W2028941895 title "Chlorine-induced Si surface segregation on the Ge-terminated Si/Ge(100) surface from core-level photoemission" @default.
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- W2028941895 doi "https://doi.org/10.1103/physrevb.64.233302" @default.
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