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- W2028974705 abstract "Recently, N-face GaN high electron mobility transistors (HEMTs) grown by plasma-assisted molecular beam epitaxy (PA-MBE) have been successfully demonstrated [1–3]. The reversed polarization in N-face (000 1) GaN compared to the Ga-face (0001) offers design advantages for the scaling of GaN HEMTs. Fig. 1 shows an illustrative N-face HEMT consisting of Al 0.1 Ga 0.9 N (cap)/GaN (channel)/AlN (barrier)/GaN (buffer) [2]. The large dipole moment in the strained AlN (ΔE P ) enables the accumulation of a two-dimensional electron gas (2DEG) and positive charges (hole traps [4]) at its top and bottom interfaces with GaN, respectively, pinning the Fermi level (E F ) at the conduction and valence band edges. The Si δ-doping supplies charges to the 2DEG and prevents dc-RF dispersion caused by the modulation of the hole traps close to the valence band edge (E V ) of the bottom AlN/GaN interface [1,4] — effectively, the ionized Si donors deplete the positive trapped charges via the field-effect. The GaN-spacer reduces remote ionized impurity scattering to the 2DEG due to the Si. With its large polarization field, the AlN provides an inherent strong back-barrier to the 2DEG for reducing short channel effects. Moreover, it is easy to engineer N-face HEMTs for low Ohmic contact resistances since the layer with narrower bandgap is exposed to the surface [5]. The polarization field in the Al 0.1 Ga 0.9 N cap reduces gate leakage with minimal 2DEG depletion." @default.
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- W2028974705 date "2009-06-01" @default.
- W2028974705 modified "2023-09-23" @default.
- W2028974705 title "High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE" @default.
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- W2028974705 doi "https://doi.org/10.1109/drc.2009.5354964" @default.
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