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- W2028982287 abstract "Abstract By utilizing the reaction between H-radicals and disilanes, we have constructed a silyl-radical-driven deposition system, suitable for illuminating the conditions for successful low-temperature growth of hydrogenated amorphous silicon film. The system could be operated with typically a 15 ms gas residence time to minimize the secondary radical reactions in the gas phase. Most of the bulk properties of films grown in this condition proved not only comparable with those generally associated with device-quality films, but independent of the substrate temperature at least in the 20–200°C range, except for the electric conductivity characteristics. The corresponding initial stages of film deposition on cleaved and sputter-roughened graphite surfaces, studied by the XPS method, exhibited good conformity to the layer-growth mode." @default.
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- W2028982287 date "1994-05-01" @default.
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- W2028982287 title "Conditions for successful low-temperature growth of hydrogenated amorphous silicon film from silyl radicals conformed to layer-growth mode" @default.
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- W2028982287 doi "https://doi.org/10.1016/0169-4332(94)90428-6" @default.
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