FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2028989848> ?p ?o ?g. }

• W2028989848 endingPage "67" @default.
• W2028989848 startingPage "63" @default.
• W2028989848 abstract "Purpose The purpose of this paper was to investigate the growth dependence of InN on Si substrate with different orientation through RF reactive magnetron sputtering in ambient temperature. Design/methodology/approach The authors fabricated indium nitride (InN) thin films by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The crystalline structure and surface morphology of the InN films were characterized by X‐ray diffraction (XRD), scanning electron microscope (SEM), energy‐dispersive X‐ray spectroscopy (EDX) and atomic force microscopy (AFM). Findings X‐ray diffraction results revealed that the wurtzite InN with preferential (101) orientation are deposited. Through the Scherrer structural analysis revealed nanocrystalline structure for InN films grown on Si (110), Si (100) and Si (111) orientation with crystallite size of 42.3, 33.8 and 24.1, respectively. The optical properties of InN layers were examined by Fourier transform infrared (FTIR) and micro‐Raman reflectance spectroscopy at room temperature. The observation of the E1(TO), A1(LO), and E2(high) phonon modes of the InN from the IR and Raman results confirmed that the deposited InN thin film has hexagonal structure. Originality/value Si (110) surface is not isotropic and it may offer a unique orientation plane for the nitride films which could reduce the defect density and the resulting tensile stress responsible for film cracking. Therefore, it is absolutely worth exploring the growth of InN on Si (110) by using relatively simple and cheap reactive sputtering technique." @default.
• W2028989848 created "2016-06-24" @default.
• W2028989848 creator A5024758865 @default.
• W2028989848 creator A5070398111 @default.
• W2028989848 creator A5087053658 @default.
• W2028989848 date "2013-04-26" @default.
• W2028989848 modified "2023-09-26" @default.
• W2028989848 title "Growth of InN thin films on different Si substrates at ambient temperature" @default.
• W2028989848 cites W1972839360 @default.
• W2028989848 cites W1976447262 @default.
• W2028989848 cites W1976927697 @default.
• W2028989848 cites W1976993333 @default.
• W2028989848 cites W1993238155 @default.
• W2028989848 cites W2002348896 @default.
• W2028989848 cites W2006580003 @default.
• W2028989848 cites W2010909429 @default.
• W2028989848 cites W2011508691 @default.
• W2028989848 cites W2047269688 @default.
• W2028989848 cites W2047520071 @default.
• W2028989848 cites W2050166596 @default.
• W2028989848 cites W2064303760 @default.
• W2028989848 cites W2077010858 @default.
• W2028989848 cites W2130570673 @default.
• W2028989848 doi "https://doi.org/10.1108/13565361311314430" @default.
• W2028989848 hasPublicationYear "2013" @default.
• W2028989848 type Work @default.
• W2028989848 sameAs 2028989848 @default.
• W2028989848 citedByCount "8" @default.
• W2028989848 countsByYear W20289898482014 @default.
• W2028989848 countsByYear W20289898482015 @default.
• W2028989848 countsByYear W20289898482016 @default.
• W2028989848 countsByYear W20289898482019 @default.
• W2028989848 countsByYear W20289898482020 @default.
• W2028989848 countsByYear W20289898482022 @default.
• W2028989848 crossrefType "journal-article" @default.
• W2028989848 hasAuthorship W2028989848A5024758865 @default.
• W2028989848 hasAuthorship W2028989848A5070398111 @default.
• W2028989848 hasAuthorship W2028989848A5087053658 @default.
• W2028989848 hasConcept C111368507 @default.
• W2028989848 hasConcept C113196181 @default.
• W2028989848 hasConcept C120665830 @default.
• W2028989848 hasConcept C121332964 @default.
• W2028989848 hasConcept C127313418 @default.
• W2028989848 hasConcept C137637335 @default.
• W2028989848 hasConcept C140676511 @default.
• W2028989848 hasConcept C159985019 @default.
• W2028989848 hasConcept C171250308 @default.
• W2028989848 hasConcept C185592680 @default.
• W2028989848 hasConcept C19067145 @default.
• W2028989848 hasConcept C191897082 @default.
• W2028989848 hasConcept C192562407 @default.
• W2028989848 hasConcept C194760766 @default.
• W2028989848 hasConcept C22423302 @default.
• W2028989848 hasConcept C26771246 @default.
• W2028989848 hasConcept C2777081994 @default.
• W2028989848 hasConcept C2777289219 @default.
• W2028989848 hasConcept C2779227376 @default.
• W2028989848 hasConcept C3045981 @default.
• W2028989848 hasConcept C40003534 @default.
• W2028989848 hasConcept C43617362 @default.
• W2028989848 hasConcept C535196362 @default.
• W2028989848 hasConceptScore W2028989848C111368507 @default.
• W2028989848 hasConceptScore W2028989848C113196181 @default.
• W2028989848 hasConceptScore W2028989848C120665830 @default.
• W2028989848 hasConceptScore W2028989848C121332964 @default.
• W2028989848 hasConceptScore W2028989848C127313418 @default.
• W2028989848 hasConceptScore W2028989848C137637335 @default.
• W2028989848 hasConceptScore W2028989848C140676511 @default.
• W2028989848 hasConceptScore W2028989848C159985019 @default.
• W2028989848 hasConceptScore W2028989848C171250308 @default.
• W2028989848 hasConceptScore W2028989848C185592680 @default.
• W2028989848 hasConceptScore W2028989848C19067145 @default.
• W2028989848 hasConceptScore W2028989848C191897082 @default.
• W2028989848 hasConceptScore W2028989848C192562407 @default.
• W2028989848 hasConceptScore W2028989848C194760766 @default.
• W2028989848 hasConceptScore W2028989848C22423302 @default.
• W2028989848 hasConceptScore W2028989848C26771246 @default.
• W2028989848 hasConceptScore W2028989848C2777081994 @default.
• W2028989848 hasConceptScore W2028989848C2777289219 @default.
• W2028989848 hasConceptScore W2028989848C2779227376 @default.
• W2028989848 hasConceptScore W2028989848C3045981 @default.
• W2028989848 hasConceptScore W2028989848C40003534 @default.
• W2028989848 hasConceptScore W2028989848C43617362 @default.
• W2028989848 hasConceptScore W2028989848C535196362 @default.
• W2028989848 hasIssue "2" @default.
• W2028989848 hasLocation W20289898481 @default.
• W2028989848 hasOpenAccess W2028989848 @default.
• W2028989848 hasPrimaryLocation W20289898481 @default.
• W2028989848 hasRelatedWork W2067091810 @default.
• W2028989848 hasRelatedWork W2069745943 @default.
• W2028989848 hasRelatedWork W2090876776 @default.
• W2028989848 hasRelatedWork W2090950168 @default.
• W2028989848 hasRelatedWork W2364045966 @default.
• W2028989848 hasRelatedWork W2364906195 @default.
• W2028989848 hasRelatedWork W2462427570 @default.
• W2028989848 hasRelatedWork W2543875102 @default.
• W2028989848 hasRelatedWork W3160213465 @default.
• W2028989848 hasRelatedWork W3187139661 @default.

• next