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• W2029004675 abstract "We report on solution-processed n-channel ZnO thin-film transistors. We fabricated by a low-temperature process to improve their performance using inkjet printing under various conditions. The resulting films were inkjet-printed with a resolution 200 dpi using droplets of 50 µm diameter and 35 pl volume. The characteristics of the inkjet-printed TFTs were improved significantly at an annealing temperature of 150 °C. The field-effect mobility, Vth, and on/off current ratio were 3.03 cm2 V−1 s−1, −3.3 V, and 106, respectively. These results indicate that annealing at 150 °C is sufficient to obtain a mobility (μsat) as large as 3.03 cm2 V−1 s−1." @default.
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• W2029004675 date "2014-04-28" @default.
• W2029004675 modified "2023-10-17" @default.
• W2029004675 title "Device characteristics of inkjet-printed ZnO TFTs by solution process" @default.
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• W2029004675 doi "https://doi.org/10.7567/jjap.53.05hb10" @default.
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