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• W2029081657 abstract "We report the successful growth of quaternary Cu2ZnSnSe4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd:YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 104–105 cm–1, a bandgap of 1.5 eV and a carrier concentration of the order of 1017–1018 cm–3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)" @default.
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• W2029081657 date "2007-10-01" @default.
• W2029081657 modified "2023-09-27" @default.
• W2029081657 title "Pulsed laser deposition of quaternary Cu₂ZnSnSe₄thin films" @default.
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• W2029081657 doi "https://doi.org/10.1002/pssa.200723144" @default.
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