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• W2029091710 endingPage "53" @default.
• W2029091710 startingPage "1" @default.
• W2029091710 abstract "The growth of films of the Zn and Cd chalcogenides by evaporation in vacuum is reviewed. In recent years improved growth techniques have been adopted and better II–VI materials have become available. This has had two main effects: minimum epitaxial growth temperatures have been lowered and the structural perfection of the films has been improved. Twins and included grains of second-phase material produce irrational or satellite spots in electron diffraction patterns. High densities (above about 1013 cm−2) of {111} planar defects produce <111 > streaks in the electron diffraction patterns of epitaxial II–VI films. The improved growth techniques and materials have resulted in the growth of epitaxial films of a number of these compounds giving diffraction patterns that contain neither satellite spots nor streaks. A recently reported annealing technique reduced the density of stacking faults in ZnSe films to about 107 cm−2. For all combinations of II–VI compounds and substrate materials reported, there are substrate deposition cut-off temperatures above which no film will deposit. In the case of alkali halide substrates this is the substrate sublimation temperature, while in the case of Ge and Si substrates it appears to be a critical temperature for the onset of vapour phase chemical attack reactions. All the epitaxial orientation relations for II–VI compound films grown on cubic crystal substrates are of two types only. The sphalerite-structure films always grow in the parallel orientation and the wurtzite-structure films always grow in the quasi-parallel orientation on these substrates. Moreover, at the low temperatures characteristic of epitaxial growth by vacuum evaporation all the compounds grow with the sphalerite structure on cubic substrates with (100)- or (110)-oriented surfaces. These facts are all related to the energies of the coherent interfaces between the epitaxial films and the substrates. The coincidence lattice idea and misfit dislocation theories are useful in explaining these features of II–VI epitaxy, as well as the small deviations (<2°) from the exactly parallel orientation relation found by Igarashi. The interfaces between epitaxial II–VI films and semiconductor substrates are heterojunctions. The electrical effects of the dangling bonds in the cores of the misfit dislocations make these structural defects important in relation to the physical properties of the heterojunctions." @default.
• W2029091710 created "2016-06-24" @default.
• W2029091710 creator A5031067570 @default.
• W2029091710 date "1974-11-01" @default.
• W2029091710 modified "2023-10-10" @default.
• W2029091710 title "The growth and structure of epitaxial films and heterojunctions of II–VI compounds" @default.
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