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- W2029100013 abstract "Abstract Transmission electron microscopy (TEM) has been applied to study compensation-like effects in BF2+ + As+ and BF2+ + P+ double implants in silicon. For both BF2+ +As+ and BF2+ + P+ double implant samples, with BF2+ implanted to a dose of 5 × 1015/cm2, the fluences of As+ or P+ were ranged from 1 × 1014 to 5 × 1015/cm2. The solid phase epitaxial growth (SPEG) rate was found to decrease with increasing dose of n-type dopants. The results revealed a strong compensation-like effect on the SPEG in both systems. In both BF2+ +As+ and BF2+ +P+ double implant samples, the density of residual defects was found to decrease with increasing dose of n type dopant. As+ was found to be more effective than P+ in alleviating defect formation in double implant samples. The results are compared with those in BF2+, As+ and P+ single implant samples." @default.
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- W2029100013 date "1989-03-01" @default.
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- W2029100013 title "Compensation-like effects in BF2+ + As+ and BF2+ + P+ implanted silicon" @default.
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- W2029100013 doi "https://doi.org/10.1016/0168-583x(89)90818-5" @default.
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