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• W2029107526 abstract "Abstract Low-resistance Ag ohmic contacts to semi-polar (1 1 −2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10−4 Ω cm2 better than that of Ag-only contacts (1.0 × 10−3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed." @default.
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• W2029107526 date "2014-11-01" @default.
• W2029107526 modified "2023-09-27" @default.
• W2029107526 title "Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 −2 2) plane p-type GaN" @default.
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• W2029107526 doi "https://doi.org/10.1016/j.spmi.2014.10.009" @default.
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