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- W2029109488 abstract "Abstract Intense, continuous distributions of kinetic emitted electrons, often with energies extending to greater than 100 eV, have been observed for Ga, Ge, In and Sn surfaces bombarded with keV Ar + ions. These broad distributions, which clearly are not associated with Auger excitation, can be understood in terms of a one-electron collisional-excitation model involving orbital interaction, promotion, and direct-to-continuum deexcitation. Possible pathways for electron promotion have been obtained for the above elements from detailed calculations of correlation diagrams which have been used to predict successfully the probability of collisional excitation and deep-level promotion. Element-specific differences observed in the kinetic emission spectra between the two pairs of elements, the Ga and Ge pair and the In and Sn pair (associated with collisional level-coupling and promotion processes), also have been interpreted from these correlation diagrams. We conclude that the high-energy, kinetic electron emission as well as the specific differences observed between the Ga and Ge pair and the In and Sn pair are consistent with this one-electron promotion/deexcitation model." @default.
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- W2029109488 date "1997-02-01" @default.
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- W2029109488 title "High-energy electron emission from ion-bombarded surfaces of Ga, Ge, In and Sn" @default.
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- W2029109488 doi "https://doi.org/10.1016/s0168-583x(96)00785-9" @default.
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