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- W2029122365 startingPage "935" @default.
- W2029122365 abstract "Nous utilisons un mode de depot de silice photochimique pour la realisation d'un transistor MISFET sur substrat en phosphure d'indium, InP, a grille autoalignee. Cette technique necessite l'emploi d'un recuit a haute temperature. Nous avons soumis ces films a des recuits rapides, sous lampes, dans une gamme de temperature de 300 a 900 °C. Les analyses ont ete faites par spectroscopie infrarouge par transmission, ellipsometrie spectroscopique, mesures de capacites de diodes MIS a 1 MHz, et courants de fuite. Nous avons constate une deshydratation rapide, une amelioration notable de la resistivite et de la constante dielectrique. Il apparait des charges fixes dans l'oxyde qu'un recuit a basse temperature permet d'eliminer. La densite de ces films est de 2,06. L'ellipsometrie revele un leger exces de silicium (1 %). Les performances des premiers transistors restent modestes (12 mS/mm) mais avec une faible derive (< qq % sur 10 4 s) a Vds = 0,1 V et Vgs = 2,5 V." @default.
- W2029122365 created "2016-06-24" @default.
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- W2029122365 date "1990-01-01" @default.
- W2029122365 modified "2023-10-16" @default.
- W2029122365 title "Silice UVCVD pour transistors MISFET autoalignés sur InP" @default.
- W2029122365 cites W2034028123 @default.
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- W2029122365 doi "https://doi.org/10.1051/rphysap:01990002509093500" @default.
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