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- W2029128814 abstract "Abstract Thermal equilibrium processes induced by thermal quenching have been studied in undoped r.f. glow-discharge a-Si: H films deposited under various conditions. After thermal quenching, d.c. and a.c. conductivity measurements were made on samples in coplanar and sandwich (n+-i-n+) configurations. During a study of the time dependence of isothermal relaxation at different temperatures 7: other experimental techniques were also employed, namely the constant photocurrent method, photoconductivity and space-charge-limited current measurements. Fundamental parameters such as sub-bandgap absorption coefficient α(hv, T, t), defect density Ns(T, t) and exponent γ(T, t) in [sgrave]ph αGy(T, r) have been deduced. The equilibrium temperature of the films is found to be 180–200°C. The inverse equilibration time is thermally activated with an energy of 1.4–1-8 eV. The defect density increases with temperature with an activation energy of about 0.12 eV. Experimental results are analysed using a distribution of dangling-bond levels Do centred at ED = 0.9 to 1 eV below the conduction band edge. After quenching it is shown that, compared to a slow cool: (a) the Do distribution is broadened, (b) the peak of the distribution is shifted towards the valence band edge. We observe a good correlation between the isothermal relaxations of the dark conductivity, the potoconductivity and the defect density. Finally the results are discussed in terms of dispersive diffusion of hydrogen." @default.
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- W2029128814 date "1991-04-01" @default.
- W2029128814 modified "2023-10-18" @default.
- W2029128814 title "Metastable effects induced by thermal quenching in undoped amorphous silicon" @default.
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- W2029128814 doi "https://doi.org/10.1080/13642819108205540" @default.
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