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- W2029156715 abstract "The ion‐induced secondary electron emission coefficient γ from the a‐Si:H film deposited from a SiH4 glow discharge is measured in situ using an electrostatic grid analyzer. At low SiH4 pressure and discharge power density, γ≊0.033±0.004 and the overall electrical power dissipation does not vary with the gas and wall temperature between 25 and 250 °C, when the SiH4 molecular density is kept constant. However, the a‐Si:H film deposition rate does depend on the temperature, which reveals the effects of thermally activated gas phase of H and SiH2 radicals arising from SiH4 dissociation." @default.
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- W2029156715 date "1993-03-01" @default.
- W2029156715 modified "2023-09-27" @default.
- W2029156715 title "Ion‐induced secondary electron emission in SiH<sub>4</sub>glow discharge, and temperature dependence of hydrogenated amorphous silicon deposition rate" @default.
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- W2029156715 doi "https://doi.org/10.1063/1.353070" @default.
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