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• W2029177913 startingPage "2299" @default.
• W2029177913 abstract "A facile method for the fabrication of negatively and positively charged rGO field effect transistors (FETs) is proposed, which utilizes electrostatic attraction between electrodes and rGO sheets. Negatively and positively charged rGO sheets are functionalized with carboxylic acid and amine groups, respectively. The FET of amine-functionalized rGO exhibits an n-doping effect. The FET devices fabricated by this method show high mobility of carriers. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article." @default.
• W2029177913 created "2016-06-24" @default.
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• W2029177913 date "2012-04-02" @default.
• W2029177913 modified "2023-10-16" @default.
• W2029177913 title "Facile Method for rGO Field Effect Transistor: Selective Adsorption of rGO on SAM-Treated Gold Electrode by Electrostatic Attraction" @default.
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• W2029177913 doi "https://doi.org/10.1002/adma.201104094" @default.
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