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- W2029288257 abstract "MeV ion implantation in Si above a dose of 1014/cm2 leads to secondary defect formation in a buried layer, which is rather stable. Annealing of Si(100) implanted with 2.0 MeV B+ ions to a dose of 2.2×1014/cm2 has been investigated by means of cross-sectional transmission electron microscopy. After annealing at 900 °C for 15 min, dislocation loops elongated along [110] were found. A remarkable decrease in secondary defect formation has been observed if, in addition, 140 keV Si+ was implanted prior to annealing." @default.
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- W2029288257 date "1989-10-30" @default.
- W2029288257 modified "2023-09-26" @default.
- W2029288257 title "Reduction of secondary defect formation in MeV B+ion‐implanted Si (100)" @default.
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- W2029288257 doi "https://doi.org/10.1063/1.102181" @default.
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