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• W2029288399 abstract "The crystallization of ultrathin hafnium silicon oxynitride (HfSiON) gate dielectric is studied as a function of physical thickness. Grazing incidence x-ray diffraction (GI-XRD) was used to detect phase separation and crystallization of 1.5, 2.0, 2.5, and 4.0 nm HfSiON films after 1000°C10s dopant activation anneal. Crystallization peaks corresponding to monoclinic and tetragonal HfO2 were detected in 2.5 and 4.0 nm HfSiON films. These GI-XRD results were supported by plan-view transmission electron microscopy images of the HfSiON films. Film crystallinity seems to impact voltage instability in thicker HfSiON films." @default.
• W2029288399 created "2016-06-24" @default.
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• W2029288399 date "2006-01-16" @default.
• W2029288399 modified "2023-10-17" @default.
• W2029288399 title "Effect of thickness on the crystallization of ultrathin HfSiON gate dielectrics" @default.
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• W2029288399 doi "https://doi.org/10.1063/1.2165182" @default.
• W2029288399 hasPublicationYear "2006" @default.
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