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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2029341444> ?p ?o ?g. }

• W2029341444 abstract "An electron cyclotron resonance assisted plasma with N2 being the plasma source gas was employed to deposit hexagonal GaN on (0001) surface of α-Al2O3 substrate. By special gas distributor, trimethgallium was introduced into reactant zone. A 10 × 10 mm uniform GaN film was gained with relatively low deposition temperature, 560°C, and high growth rate of 1.4 μm/h. A good crystal microstructure was confirmed by its spectrum with full width at half maximum of 15 arcmin." @default.
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• W2029341444 date "1998-10-01" @default.
• W2029341444 modified "2023-09-24" @default.
• W2029341444 title "Application of Electron Cyclotron Resonance Assisted Plasma in GaN Deposition" @default.
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• W2029341444 doi "https://doi.org/10.1088/0256-307x/15/10/023" @default.
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