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- W2029346540 abstract "Silicon nitride films were synthesized using the new process of photo-chemical vapour deposition (photo-CVD). Films of different compositions were prepared by mercury-sensitized photo-CVD using 2% silane and ammonia as reactant gases. Material properties of interest to device technology have been evaluated. Dependence of the properties of the films on the Si/N ratio and the amount of hydrogen present in the films is studied, and optimum growth conditions of deposition are identified. Studies of metal-insulators-semiconductor structures with the optimized photo nitride as an active dielectric showed fixed charge ∼ 1.2 × 1011 cm−2, mobile charge 3 × 1010 cm−2 and midgap interface state density ∼ 1.7 × 1011 eV−1 cm−1 indicating their potential for use in metal-organic-semiconductor technology. A limited comparison of data with direct photo-CVD is also given." @default.
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- W2029346540 date "1995-10-01" @default.
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- W2029346540 title "Photo-processing of silicon nitride" @default.
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