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• W2029364523 abstract "The systematic variation of the temperature dependence of the second temperature derivative of the electrical resistivity d2ϱdT2 is reproduced by model calculations, assuming the existence of a narrow conduction band in the vicinity of the Fermi level EF. The analysis of the characteristic features on the d2ϱ/dT2 vs. T curve makes it possible to determine both the half-band width T2=(ϵ2-ϵ1)/2KB, where ϵ1, ϵ2 are the band edges, and the Fermi level position with respect to the middle of the band T1=[12(ϵ1+ϵ2)-EF]/KB. It is shown that d2ϱ/dT2 is negative in this model at certain temperatures below T2 if the condition 0.563T2<|T1|<T2 is fulfilled, and positive at all temperatures if |T1| is outside this interval, while dϱ/ dT>0 in both cases. This fact may be responsible for the complex behaviour of the ϱ(T) dependence caused by the change of composition during the metal-insulator transition in high-Tc oxides." @default.
• W2029364523 created "2016-06-24" @default.
• W2029364523 creator A5002520314 @default.
• W2029364523 date "1994-07-01" @default.
• W2029364523 modified "2023-10-01" @default.
• W2029364523 title "Possible influence of the Fermi level position inside the conduction band of high-Tc oxides on the temperature dependence of their resistivity" @default.
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• W2029364523 doi "https://doi.org/10.1016/0921-4534(94)90089-2" @default.
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