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- W2029366276 abstract "Nondestructive determination of the polarity of GaN has been achieved by the use of coaxial impact-collision ion scattering spectroscopy analysis. The polarity of a GaN film with a smooth surface on non-nitrided c-plane sapphire was identified (0001) (Ga face; +c). GaN films with a 20 nm buffer layer on nitrided sapphire had (0001̄) (N face; −c) polarity and a hexagonal faceted surface. The influence of both the buffer layer and of substrate nitridation on the polarity of wurtzite {0001} GaN films deposited by two-step metal organic chemical vapor deposition (MOCVD) has been investigated. The polarity of the buffer layer on a nitrided sapphire substrate was altered by varying its thickness or the annealing time. It was found that the polarity of the GaN film is determined by the polarity of the annealed buffer layer; MOCVD-GaN films on buffer layers with +c and −c polarity have either +c (smooth surface) or −c (hexagonal facet) polarity, respectively." @default.
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- W2029366276 date "1999-08-02" @default.
- W2029366276 modified "2023-10-14" @default.
- W2029366276 title "Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy" @default.
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- W2029366276 doi "https://doi.org/10.1063/1.124478" @default.
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