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- W2029376978 abstract "In this paper we report on the optical and electrical studies of single GaAs1−x N x epitaxial layers grown on GaAs substrates by means of atmospheric pressure metal organic vapour phase epitaxy (APMOVPE). Three kinds of samples with 1.2 %, 1.6 % and 2.7 % nitrogen content were studied. Optical properties of the layers were investigated with the use of room temperature transmittance and reflectance measurements. Subsequently Schottky Au-GaAs1−x N x contacts were processed and characterized by current-voltage (I-V) and capacitance-voltage (C-V) measurements within 80–480 K temperature range. From the I-V and C-V characteristics the ideality factor, series resistance and built-in potential were determined. Obtained diodes can be used for further studies on defects with the use of DLTS method." @default.
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- W2029376978 date "2013-10-01" @default.
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- W2029376978 title "Electro-optical properties of diluted GaAsN on GaAs grown by APMOVPE" @default.
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- W2029376978 doi "https://doi.org/10.2478/s13536-013-0144-2" @default.
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