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• W2029385633 abstract "The Z1/2 center in n-type 4H-SiC epilayers—a dominant deep level limiting the carrier lifetime—has been investigated. Using capacitance versus voltage (C-V) measurements and deep level transient spectroscopy (DLTS), we show that the Z1/2 center is responsible for the carrier compensation in n-type 4H-SiC epilayers irradiated by low-energy (250 keV) electrons. The concentration of the Z1/2 defect obtained by C-V and DLTS correlates well with that of the carbon vacancy (VC) determined by electron paramagnetic resonance, suggesting that the Z1/2 deep level originates from VC." @default.
• W2029385633 created "2016-06-24" @default.
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• W2029385633 date "2013-03-18" @default.
• W2029385633 modified "2023-09-26" @default.
• W2029385633 title "Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance" @default.
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• W2029385633 doi "https://doi.org/10.1063/1.4796141" @default.
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