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- W2029388746 abstract "An advanced metallization of very-large-scale integration devices applicable for a 4 Mbyte dynamic random-access memory is discussed. MoSi2/polycrystalline silicon is used as the interconnection material on the bit-line level. A temperature stability up to 1200 K and low resistivity (100 μμ cm) are achieved. The homogeneity of the film deposition onto a submicrometre topology and the annealing ambient are critical parameters of the process reliability. For the aluminium metallization, two reliability aspects are discussed: step coverage in contact holes predicted by three-dimensional (3D) simulations and stable electric contacts by introducing a TiN diffusion barrier. A comparison between two-dimensional (2D) and 3D simulations results in a good agreement of scanning electron microscopy cross-sections and 3D simulations. A 2D simulation gives a better step and bottom coverage than that actually found." @default.
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- W2029388746 date "1989-08-01" @default.
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- W2029388746 title "Advanced metallization of very-large-scale integration devices" @default.
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- W2029388746 doi "https://doi.org/10.1016/0040-6090(89)90802-x" @default.
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