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• W2029492012 abstract "The performance of GaN power devices has been rapidly improving. Recently, the main approach is the use of AlGaN/GaN HEMT structures on Si substrates, for which the target breakdown voltage is initially 600V or less. Although issues still remain with regard to current collapse and the threshold voltage required for normally-off operation, many companies have announced their intention to commercialize such devices. In this report, recent developments concerning GaN power devices are reviewed, and unresolved issues and future expectations are discussed." @default.
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• W2029492012 creator A5049989419 @default.
• W2029492012 date "2013-01-01" @default.
• W2029492012 modified "2023-10-14" @default.
• W2029492012 title "Current status of GaN power devices" @default.
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• W2029492012 doi "https://doi.org/10.1587/elex.10.20132005" @default.
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