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• W2029494088 abstract "The optical constants of porous silicon layers formed in wafers with resistivities of 0.01–25 Omega cm and densities of 20%–75% were determined by ellipsometry in the wavelength range 0.28–0.7 microm and by reflectance and transmission from 0.6 to 2.5 microm. The IR refractive index was found to decrease as the density was reduced and an effective medium model was used to obtain density values from the optical data. Good agreement was obtained with gravimetric densities for 0.01 Omega cm samples on the assumption of a mixture of crystalline silicon and air, but material of higher resistivity showed apparently reduced optical densities because of the presence of some oxidized silicon. The optical measurements indicate that the material is a chemical mixture (SiOx) at high oxygen concentrations. ε1 and ε2 spectra showed that 0.01 Omega cm samples had better crystallinity than higher resistivity samples and this was confirmed by the observation of amorphous-like bands in photoluminescence spectra of the latter material." @default.
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• W2029494088 date "1985-03-01" @default.
• W2029494088 modified "2023-10-14" @default.
• W2029494088 title "Optical properties of porous silicon films" @default.
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• W2029494088 doi "https://doi.org/10.1016/0040-6090(85)90408-0" @default.
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