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• W2029505237 endingPage "1174" @default.
• W2029505237 startingPage "1169" @default.
• W2029505237 abstract "Amorphous carbon films, characterized by XRD, AFM, SEM and Raman, were deposited from SiCl3CCl3 on quartz substrates at 773–1273 K by low pressure chemical vapor deposition using a hot-wall reactor. XPS studies showed that the films grown at 773 K contained 90% C and 10% Cl, while the films grown at 1273 K contained 100% C. SiCl4, CCl4 and Cl2CCCl2 were detected by on-line FT-IR studies. The extrusion of dichlorocarbene, :CCl2, from SiCl3CCl3 should provide the source of carbon in the reaction. On Si substrates, an etching process at the film-substrate interface assisted the lift-off of the films from the substrates. The C films curled and formed rolls." @default.
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• W2029505237 date "2003-01-01" @default.
• W2029505237 modified "2023-09-26" @default.
• W2029505237 title "SiCl3CCl3 as a novel precursor for chemical vapor deposition of amorphous carbon films" @default.
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• W2029505237 doi "https://doi.org/10.1016/s0008-6223(03)00022-8" @default.
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