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- W2029509625 abstract "The authors have fabricated AlGaN/GaN HEMTs with gate-lengths down to 70 nm to investigate DC- and high frequency characteristics and the breakdown behaviour, respectively. Comparisons with HEMTS fabricated on the same wafer but with a longer gate-length (2µm) are presented as well. The 70 nm devices have a transconductance of ~155 mS/mm, fT is 43 GHz and fmax ~100 GHz. The breakdown voltage reaches 27 V at ID = 550 mA/mm." @default.
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- W2029509625 date "1999-01-01" @default.
- W2029509625 modified "2023-09-24" @default.
- W2029509625 title "Short-channel AlGaN/GaN HEMTs with 70 nm T-gate" @default.
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- W2029509625 doi "https://doi.org/10.1049/el:19991387" @default.
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