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- W2029558818 abstract "The trapping and emission of carriers in the gate-to-drain region of an AlGaN/GaN high-electron-mobility transistor (HEMT) have been investigated using a bias-controllable field plate (CFP). Once an instantaneous positive CFP voltage is applied after bias stress in a transient drain current measurement, carrier trapping occurs, which can subsequently be observed as a drain current discontinuity. Numerical analysis of carrier trapping using the Shockley?Read?Hall process also provides a trapped carrier density of 5.1 ? 1012 cm?2 and an energy level of 0.6 eV." @default.
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- W2029558818 date "2015-02-23" @default.
- W2029558818 modified "2023-09-25" @default.
- W2029558818 title "Transient characteristics of AlGaN/GaN high-electron-mobility transistor with bias-controllable field plate" @default.
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