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- W2029727367 abstract "The present status of semiconductor surface research is briefly reviewed. The properties of the space-charge region, the oxide layer normally present on a real surface, and the slow and fast states are considered. Various measurements, such as those of field effect over a wide frequency range and surface recombination velocity are discussed. The energy distribution and hole and electron capture cross-sections of the fast states in germanium and silicon, as deduced from such measurements by various workers, are then summarized. The good experimental agreement among workers in this field as to the general characteristics of the fast states is particularly significant in view of the widely different treatments given to the surface in the different laboratories. Although the information available on the surface states is appreciable, particularly on germanium, the important question of their origin is still largely open. Some implications of the meagre available data bearing on this problem will be discussed." @default.
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- W2029727367 date "1959-01-01" @default.
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- W2029727367 title "The electrical structure of semiconductor surfaces" @default.
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- W2029727367 doi "https://doi.org/10.1016/0022-3697(59)90282-3" @default.
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