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- W2029736618 abstract "Although flash memory has gained very strong momentum in the storage market, the reliability of flash-memory chips has been dropped significantly in the past years. This article presents a reliability enhancement design under the flash management layer (i.e., flash translation layer) to address this concern so as to reduce the design complexity of flash-memory management software/firmware and to improve the maintainability and portability of existing and future products. In particular, a log-based write strategy with a hash-based caching policy is proposed to provide extra ECC redundancy and performance improvement. Strategies for bad block management are also presented. The failure rate of flash-memory storage systems is analyzed with the considerations of bit errors. The proposed design is later evaluated by a series of experiments based on realistic traces. It was shown that the proposed approach could significantly improve the reliability of flash memory with very limited system overheads." @default.
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- W2029736618 date "2013-08-01" @default.
- W2029736618 modified "2023-10-16" @default.
- W2029736618 title "A reliability enhancement design under the flash translation layer for MLC-based flash-memory storage systems" @default.
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- W2029736618 doi "https://doi.org/10.1145/2512467" @default.
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