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• W2029775868 abstract "Photo-Hall free electron concentrations were measured on MBE-grown silicon planar-doped GaAs samples, for silicon nominal concentration in the range of (1.4 to 88)×1012 cm-2. We found both positive and negative persistent photoconductivities (PPPC and NPPC), which were discussed based on the growth parameters. Time resolved PPC measurements show some evidence that the positive and negative PPC effects are related to different physical processes. The PPPC effect seems to be related to the spatial charge separation and to the EL2 center and the NPPC effect to the DX center." @default.
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• W2029775868 date "1994-12-01" @default.
• W2029775868 modified "2023-09-26" @default.
• W2029775868 title "Observation of the negative and positive persistent photoconductivity phenomena in silicon planar-doped GaAs" @default.
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• W2029775868 doi "https://doi.org/10.1016/0038-1098(94)90765-x" @default.
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