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- W2029792562 abstract "Abstract Strain relaxation and dislocation formation for PbTe molecular beam epitaxy on 5.2% lattice-mismatched (0 0 1) PbSe substrates is studied using in situ reflection high-energy electron diffraction and scanning tunneling microscopy. For layers exceeding 1 monolayer (ML) in thickness misfit dislocations are formed along the fourfold in-plane 〈1 1 0〉 directions within the layer/substrate interface. These misfit dislocations are of pure edge type with a 1 2 [1 1 0] type Burgers vector parallel to the interface. At layers exceeding about 5 ML, remarkably regular square arrays of misfit dislocations are formed with a dislocation spacing of 10 nm and a high uniformity of the spacings of ±12%. This is due to the mutual lateral elastic repulsion between the dislocations as well as the fact that the (0 0 1) interface is a preferred dislocation glide plane in the lead salt compounds." @default.
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- W2029792562 date "2002-03-01" @default.
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- W2029792562 title "Strain relaxation and dislocation patterning in PbTe/PbSe (001) lattice-mismatched heteroepitaxy" @default.
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- W2029792562 doi "https://doi.org/10.1016/s0169-4332(01)00733-4" @default.
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