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• W2029808896 abstract "A theoretical analysis of the impact of scaling down on the low frequency noise characteristics of silicon MOS transistors is presented. This analysis is based on the assumption that low frequency noise in large area MOS devices arises from the superposition of many RTS (random telegraph signal) fluctuators. An analytical formula for the input gate voltage noise in large area devices is derived from the RTS approach, reconciling the McWhorter and the RTS approaches. Moreover, we show that, for a realistic scaling law, the miniaturization of the devices will lead to an increase of the mean noise level linearly with the scaling factor and to a substantial (≈three orders wide) sample-to-sample noise level dispersion, whereas for a classical scaling law, the mean noise is found to be independent of scaling. Finally, it is shown that the miniaturization will also result in a strong evolution of the noise spectra from 1/f to Lorentzian like for devices with channel lengths from 1 to 0.1 Nm.Eine theoretische Analyse des Einflusses der Impulsuntersetzung auf die Niederfrequenzrauschcharakteristik von Si-MOS-Transistoren wird dargestellt. Die Analyse basiert auf der Annahme, das niederfrequentes Rauschen in grosflachigen MOS-Bauelementen aus der Uberlagerung vieler RTS-Fluktuationen herruhrt. Aus der RTS-Naherung wird eine Formel fur das Eingangsgatespannungsrauschen in grosflachigen Bauelementen hergeleitet, die die Naherungen von McWorther und RTS in Einklang bringt. Weiterhin wird gezeigt, das fur ein realistisches Untersetzungsgesetz die Miniaturisierung der Bauelemente das mittlere Rauschniveau linear mit dem Untersetzungsfaktor vergrosert und zu einer erheblichen Rauschniveaudispersion fuhrt, wahrend fur den klassischen Fall das Rauschniveau unabhangig vom Untersetzungsfaktor ist. Schlieslich fuhrt eine Miniaturisierung zu einer starken Verschiebung des Rauschspektrums von einer 1/f- zu einer Lorentz-Funktion hin fur Bauelemente mit Kanallangen zwischen 1 und 0,1 μm." @default.
• W2029808896 created "2016-06-24" @default.
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• W2029808896 date "1992-08-16" @default.
• W2029808896 modified "2023-09-25" @default.
• W2029808896 title "Impact of Scaling Down on Low Frequency Noise in Silicon MOS Transistors" @default.
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• W2029808896 doi "https://doi.org/10.1002/pssa.2211320226" @default.
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