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- W2029809259 abstract "The effects of a postnitridation high-temperature hydrogen anneal on p-channel metal-nitride-oxide-semiconductor (MNOS) memory transistors have been studied. It is shown that, although the density of surface states at the Si-SiO2 interface decreases with increasing temperatures, anneal temperatures exceeding the nitride deposition temperature should not be used, since they result in a nitride degradation. Short anneals at 800 °C result in a 30% reduction in the threshold voltage decay rates by elimination of backtunneling of stored charges towards the interface states. At the same time the hydrogen anneal technique guarantees a more reliable operation of transistors in the memory array and strongly increases the channel mobilities. In hydrogen-annealed MNOS transistors the degradation process is retarded resulting in better endurance figures." @default.
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- W2029809259 title "Influence of a high-temperature hydrogen anneal on the memory characteristics of p-channel MNOS transistors" @default.
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