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- W2029813425 abstract "PtSi Schottky barrier (SB) MOSFETs were fabricated and their device performance was characterized. PtSi was selected instead of NiSi to form the p-type SB junction since such a configuration would be easy to fabricate through SF6 based plasma etching. The addition of He-O2 in SF6 decreases the etching rate of PtSi while the etching rate of Pt remains unchanged. The retardation in the etching rate of PtSi in He-O2/SF6 is attributed to the formation of a metal oxide on the etched PtSi surface, as evidenced by the x-ray photoelectron spectroscopy results. Optical emission spectroscopy was conducted to establish the endpoint where the wavelength from the feed gas was traced instead of tracing the etching by-products since the by-products have little association with the plasma reaction. The IDS–VDS curves at various VG–VTH indicate that plasma etching resulted in the successful removal of the Pt on the sidewall region, with negligible damage to the S/D area." @default.
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- W2029813425 date "2014-12-17" @default.
- W2029813425 modified "2023-10-18" @default.
- W2029813425 title "Formation of PtSi Schottky barrier MOSFETs using plasma etching" @default.
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- W2029813425 doi "https://doi.org/10.1116/1.4904361" @default.
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