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• W2029883001 abstract "We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL) capped with Ti. A 350°C post metallization anneal is used to create oxygen vacancies that dope ZnO heavily n-type (n+). Rectifying Ti/n-Ge contacts become Ohmic with 1000× higher reverse current density after insertion of n+-ZnO IL. Specific resistivity of ∼1.4×10−7 Ω cm2 is demonstrated on epitaxial n+-Ge (2.5×1019 cm−3) layers. Low resistance with ZnO IL can be attributed to (a) low barrier height from Fermi-level unpinning, (b) good conduction band alignment between ZnO and Ge, and (c) thin tunneling barrier due to the n+ doping." @default.
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• W2029883001 date "2012-10-29" @default.
• W2029883001 modified "2023-09-27" @default.
• W2029883001 title "Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer" @default.
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• W2029883001 doi "https://doi.org/10.1063/1.4764909" @default.
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