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- W2029891808 abstract "The use of high- gate oxide on Si substrates with alternative orientations is expected to contribute for the fabrication of high mobility devices. In this paper, the interfacial and electrical properties of the plasma enhanced atomic layer deposition (PE–ALD) and gate oxides on Si substrates with three different crystal orientations, (001), (011), and (111), were comparatively studied. While PE–ALD films were prepared using oxygen plasma as a reactant, PE-ALD films were prepared by in situ nitridation using oxygen/nitrogen mixture plasma. For all crystal orientations, in situ nitridation using oxygen/nitrogen mixture plasma improved electrical properties producing lower leakage currents and smaller equivalent oxide thickness values. Both and films have shown the lowest leakage current and interface state density on , whereas the poorest electrical properties were obtained on . The results are discussed based on the experimental results obtained from various analytical techniques, including , , conductance methods, and X-ray photoelectron spectroscopy." @default.
- W2029891808 created "2016-06-24" @default.
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- W2029891808 date "2008-01-01" @default.
- W2029891808 modified "2023-09-25" @default.
- W2029891808 title "Electrical Properties of Atomic Layer Deposition HfO[sub 2] and HfO[sub x]N[sub y] on Si Substrates with Various Crystal Orientations" @default.
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- W2029891808 doi "https://doi.org/10.1149/1.2840616" @default.
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