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• W2029976621 abstract "Abstract A review is given of a study of the mechanism of the adsorption of oxygen and hydrides, HxA, on clean germanium and silicon surfaces. The results obtained by the following methods are discussed: gas-volumetric measurements, surface conductivity, LEED, calorimetry and ellipsometry. Oxygen reacts under formation of an oxide layer. The adsorption of the hydrides appears to be dissociative and plane-specific." @default.
• W2029976621 created "2016-06-24" @default.
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• W2029976621 date "1969-11-01" @default.
• W2029976621 modified "2023-09-27" @default.
• W2029976621 title "Measurement of adsorption on semiconductors by ellipsometry and other methods" @default.
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• W2029976621 doi "https://doi.org/10.1016/0039-6028(69)90270-2" @default.
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