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• W2030032039 abstract "Single crystal niobium films were grown by Molecular Beam Epitaxy (MBE) on (0001)S sapphire substrates. Cross-sectional and plan-view specimens of the films were prepared so that the NbAl2O3 interface could be investigated by conventional transmission electron microscopy (CTEM) and high-resolution electron microscopy (HREM). The atomistic structure of the interface was identified by HREM. Regions of good matching and regions containing structural defects alternate at the interface. The defects can be described as misfit dislocations with no “stand-off” from the interface. The spacing of the defects corresponds to the 1.9% mismatch between the two lattices. In regions of good matching a fixed translational state between both lattices is established, which could be determined. Image simulations constructed with this translational state were in good agreement with experiment. In plan-view, periodic arrays of fringes were observed. These fringes are formed by a superposition of moire´fringes and dislocation contrast. Weak-beam techniques were used to separate these two contributions. One´labore des films monocristallins de Nb pare´pitaxie par jet mole´culaire (EJM) sur des substrats de saphir (001)S. Dese´chantillons en section droite et en section plane sont pre´pare´s de telle façon que l'interface Nb/Al2O3 puisseeˆtre observe´e par microscopiee´lectronique en transmission classique et en haute re´solution. La structure atomique de l'interface est identifie´e en haute re´solution. Des re´gions de bon accord et des re´gions contenant des de´fauts de structure alternenta`l'interface. Les de´fauts peuventeˆtre de´crits comme des dislocations de de´saccord qui ne s'e´cartent pas de l'interface. L'espacement des de´fauts correspond au de´saccord de 1,9% entre les deux re´seaux. Dans les re´gions de bon accord une´tat de translation fixe entre les deux re´seaux este´tabli et peuteˆtre de´termine´. Des simulations d'images construites avec cete´tat de translation sont en bon accord avec l'expe´rience. Dans les vues planes, des arrangements pe´riodiques de franges sont observe´s. Ces franges sont forme´es par une superposition de franges de moire´et de contraste de dislocations. Les techniques de faisceau faible sont utilise´es pour distinguer ces deux cas. Einkristalline Niobfilme werden mit der Molekularstrahlepitaxie auf (0001)S-Saphir-Substrate gezu¨chtet. Querschnitts- und Aufsichtsproben der Filme werden hergestellt, um die Nb/AL2O3-Grenzfla¨che mit hochauflo¨sender und konventioneller Elektronenmikroskopie untersuchen zu ko¨nnen. Die hochauflo¨sende Abbildung zeigt, daβ sich Bereiche guter Passung und Bereiche mit strukturellen Defektenan an der Grenzfla¨che abwechseln. Die Defekte ko¨nnen als Fehlpassungsversetzungen ‘ohne Abstand zur Grenzfläche’ beschrieben werden. Der Abstand der Defekte entspricht der Fehlpassung von 1,9% zwischen den beiden Gittern. In Bereichen guter Passung besteht eine feste Translation, die bestimmt werden konnte. Bildsimulation, die diese Translation beru¨cksichtigen, stimmen mit dem Experiment gutu¨berein. In Aufsichtproben beobachtet man periodische Anordnungen von Streifungen. Diese Streifungen werden verursacht von einerU¨berlagerung aus Moire´-Streifen und Versetzungskontrast. Mit der Weak-beam-Technik werden diese beiden Beitra¨ge getrennt." @default.
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• W2030032039 date "1992-01-01" @default.
• W2030032039 modified "2023-09-27" @default.
• W2030032039 title "Structure and defects of MBE grown NbAl2O3 interfaces" @default.
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• W2030032039 doi "https://doi.org/10.1016/0956-7151(92)90280-r" @default.
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