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- W2030037785 abstract "The unintentional n-type doping in the indium nitride thin films was investigated. The electron density decreases from 3.5×1019 to 9×1018 cm−3 and the mobility increases from 4 to 457 cm2 V−1 s−1 when the thickness increases from 50 to 350 nm. This can be explained by assuming the film consists of a surface accumulation layer and a bulk layer. It was found that the accumulation layer can be eliminated by capping the surface with silicon nitride, GaN or zinc nitride of 2 nm each, respectively; while an AlN cap layer will cause the formation of two-dimensional electron gas at the AlN/InN interface." @default.
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- W2030037785 date "2010-07-26" @default.
- W2030037785 modified "2023-10-03" @default.
- W2030037785 title "The effects of cap layers on electrical properties of indium nitride films" @default.
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- W2030037785 doi "https://doi.org/10.1063/1.3475400" @default.
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